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Chalcogenide materials exhibit a unique portfolio of properties which has led to their wide use for nonvolatile memory applications such as optical storage (CD-RW and DVD-RAM), Conductive Bridging Random Access Memory or Phase Change Random Access Memory (PCRAM). More recently, thanks to huge electronic nonlinearities under electrical field application, chalcogenide glasses are considered as most...
This paper presents infrared photonic multiplexers integrated on silicon designed to be assembled with QCL or ICL arrays in order to realize different possible broadband powerful tunable sources in the mid-infrared for multi-gas sensing.
A new Si/Ge/Si heterojunction based waveguide photodetector has been demonstrated in order to reduce the fabrication cost, increase the responsivity, and improve process robustness. State of the art characteristics in terms of dark current, responsivity and bandwidth have been obtained. Furthermore, such photodetectors were characterized in avalanche mode in order to improve the sensitivity and reduce...
We report on a fully integrated 16-channel polarization diversity fast slot-blocker with 100 GHz channel spacing using silicon photonics. We demonstrated extinction ratio of 20 dB and switching time of 10 ns timescale allowing add-drop operation as high as 320 Gbit/s PDM-32QAM signals.
Silicon photonics is becoming a technology of choice for optical communications. Compatibility with cmos manufacturing process is one key of success since it allows taking advantage of the production capacities of foundries; i.e. big volume and low cost manufacturability [1]. Germanium is the ideal candidate to build the integrated high performance photodiodes needed for receiver circuits [2]. Meanwhile,...
Silicon is the mainstream material in the electronic industry and it is rapidly expanding its dominance into the field of photonics. Indeed, silicon photonics has been the subject of intense research activities to pave the way for next generation of energy-efficient high-speed computing, information processing and communications systems. The trend is to use optics in intimate proximity to the electronic...
Different ways to merge photonics devices on an electronic circuit with microelectronics tools on large-size wafers are addressed. This full integration enables improvement of either the functionalities of the electronic circuits or the miniaturization of optical functions. The above-integrated-circuit fabrication is preferred to a combined fabrication process, with two options ruled by thermal constraints...
We demonstrate a novel fully integrated, silicon-on-insulator, 16-channel polarization diversity fast reflective slot-blocker with nanosecond switching time, integrating more than 65 functional elements. Its suitability for use in reconfigurable metropolitan networks is assessed.
We report on the realization of an on chip test structure which quantifies the degree of fabrication error of a photolithographic process. The device is based on a sequence of coupled resonators and allows performing a direct on chip test measurement.
We report our advances in development of subwavelength engineered waveguide structures. This unique NRC patented technology [1,2] allows synthesis of a metamaterial with an unprecedented control of material properties, constituting a powerful tool for a designer of photonic integrated circuits. We have demonstrated a number of subwavelength engineered devices operating at telecom wavelengths [3–7],...
Silicon-based photonics has generated a strong interest in the last years, mainly for optical telecommunications and optical interconnects in microelectronic circuits and industrial breakthroughs have been even performed by companies like IBM, Luxtera, INTEL, and ST Microelectronics. The main future rationales are the reduction of photonic system costs, the increase of the number of functionalities...
We propose a novel cost efficient node architecture for a wavelength division multiplexed packet-switched network based on reflective integrated device. We demonstrate a 16-channel, silicon-on-insulator, reflective monolithic integrated slot-blocker that integrates one arrayed waveguide grating, 16 variable optical attenuators, 16 Bragg grating mirrors and one vertical fiber coupler. Small-form factor...
We used the molecular wafer bonding technique to develop a hybrid widely tunable, monomode III-V/Si laser for wavelength division multiplexing, with a tunability over 35 nm and an output power in excess of 3 mW.
We demonstrate a 16-channel, silicon-on-insulator, monolithic integrated slot-blocker. This silicon photonic circuit includes two arrayed waveguide gratings, 16 variable optical attenuators and two vertical fiber couplers. We successfully operate it with 56 Gb/s and 80 Gb/s QPSK optical packets.
We report 40Gbit/s ring resonator based silicon modulator fabricated on 300mm SOI wafers, with a comparison between theoretical and experimental performances.
We report on the generation of chaotic signals in sequences of integrated coupled silicon resonators at telecommunication wavelengths. These can pave the way to on chip all optical random bit generators naturally compatible with silicon photonics.
Silicon-based photonics has generated a strong interest in recent years, mainly for optical telecommunications and optical interconnects in microelectronic circuits. The main rationales of silicon photonics are the reduction of photonic system costs and the increase of the number of functionalities on the same integrated chip by combining photonics and electronics. In this paper, we will present recent...
The chirp of a CMOS-compatible integrated external modulator based on carrier depletion in an asymmetric Mach-Zehnder structure has been determined from microwave carrier suppression measurements. Chirp control can be used for dispersion penalty reduction in silicon-based radio-over-fiber links and hybrid wireless/wireline passive access networks.
In most integrated optics platforms, including silicon-on-insulator, only minor modifications in refractive index are possible. The geometry of the waveguiding structure is thus the only degree of freedom for the design of devices. The use of sub-wavelength gratings (SWGs), i.e. structures that are small enough to suppress diffraction effects, enables local engineering of both refractive index and...
This paper reports on a hybrid III–V on silicon arrayed waveguide grating laser, operating on 5 wavelength channels spaced by 392 GHz, with a threshold current around 40mA and a maximum output power around 3 dBm.
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