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In this research, we reduced plasma damages on GaN-based high electron mobility transistors (HEMTs) by means of neutral beam (NB) etching. The plasma damages which are induced during dry etching process are one of the causes of decreasing device performances. The NB is almost electrically uncharged and has few UV photons, thus it can reduce plasma damages on the GaN surface. We applied NB etching...
To fabricate high reliability Micro Electro Mechanical Systems (MEMS) devices, damage-free etching with high aspect three-dimensional (3D) structure is important. Plasma etching resulted in profile anomaly near high aspect 3D structure due to distortion of ion trajectory by distortion of ion sheath and degradation of mechanical property of MEMS devices due to defect generation by UV irradiation, respectively...
All-Si tandem solar cells comprising quantum dot superlattice (QDSL) have attracted much attention. However, a fabrication to realize uniform and controllable QD size (determines band gap (Eg)) and spacing between QDs (generates miniband) in QDSL is still a big challenge. In this study, we created a two-dimensional sub-10nm-Si-nano-disk array (2D Si-ND array) with a high-density and well-ordered arrangement...
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