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A topography simulation of BiCS memory hole etching is performed. The model parameters are fitted by elementary experiments of Si and SiO2 etching, and BiCS topography simulation is performed without parameter fitting. Our new model describes the experimental topography of BiCS memory hole, including taper angles and undercuts of stacked films. The point of the modeling is that it takes into consideration...
A tight-binding method is applied to optimized Si-cluster surrounded by SiO2. As a result, it is found that the energy band structure is quite different from that of Si-substrate. It is regarded that the band-gap is invaded from the conduction band by intrinsic interfacial states.
The Si–C and Si–M–C (C, the disordered carbon) composites prepared from pyrolysis reaction and high-energy mechanical milling process have a significant enhancement in the electrochemical cycling stability over pure silicon. The introduction of the hard co-milling components (M, such as TiB 2 and TiN) in the Si–C composite before pyrolysis reaction brings an improvement in the charging rate...
A few monolayers of lead (Pb) were deposited on clean Si(110) surfaces at room temperature and the structure at the surfaces was investigated with reflection high-energy electron diffraction (RHEED). Interesting findings were obtained, such as the formation of one-dimensional atomic chains and the appearance of a 7 2 superstructure.
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