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In this paper, crosstalk included eye diagram of high-speed and wide I/O interposer channels are simulated and analyzed. To analyze the crosstalk effect of various substrate channels, silicon, glass, and organic interposers are simulated and compared under the same physical dimensions. In addition, crosstalk included eye diagrams are accurately estimated in short time using 8 worst case input signals...
In this paper, we have presented the need for Middle of Line (MOL) Local Interconnects in a fixed layout shape called “Special Constructs” in order to make 20nm a very compelling technology for product migration from 28nm. These constructs are used to demonstrate considerable area, cost, and power/performance benefits by enabling efficient and manufacturable high density standard cell libraries. Also,...
The limiting performance and reliability of metal-oxide-semiconductor (MOS) devices is determined by intrinsic bonding defects. These are primarily O-atom vacancies. A universal model, developed initially for (i) nano-crystalline transition metal (TM) Oxides is extended to O-vacancies in (i) non-crystalline SiO2 and Si oxynitride alloys. Differences between electron injection into, and trapping ay...
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