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The metal-oxide filament-based resistance change RAM (RRAM) have a preference toward bi-polar operation. For the first time, the mechanisms behind the operational bias and polarity preference, and the related ramifications for vacancy engineering toward improved bipolar RRAM operations, are explained. Experimental results support detailed models and demonstrate advantages of asymmetric oxygen vacancy...
In the conclusion, we demonstrated excellent uniformity and reliability of ZrO??/HfO?? bi-layers device. These excellent electrical and reliability properties of ZrO??/HfO?? bi-layers device show promise for future high density non-volatile memory application.
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