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In this paper, a generalized analysis of Asymmetrically-Recessed Double Gate High Electron Mobility Transistor (DGHEMT) to realize high breakdown voltage is carried out. As with aggressive scaling in FETs the short-channel effects like Vth roll-off, degradation in cut-off frequency, transconductance etc becomes unavoidable at nanometer gate-length. Recently, DGHEMT has been proposed by Wichmann et...
The paper presents a simulation study of effect of interface localised fixed charges on the performance of the Metal Semiconductor Field Effect Transistor (MESFET) for different materials (Si, GaAs and GaN) . The objective of the present work is to study the effect of hot carrier induced fixed charges at the interface of semiconductor and interfacial layer which is always present in any practical...
Net end-of-life aging prediction under realistic use conditions is the key objective for any product aging model. In this paper, a net degradation model is introduced and effects such as recovery, subsequent degradation, frequency, duty cycle, and recovery bias are evaluated. The high-kappa recovery behavior observed is consistent with SiO2 gate stacks, which allows the use of SiO2 models to predict...
Gate oxide breakdown is a key mechanism limiting IC lifetime. Breakdown is typically characterized on test capacitors, but estimating product reliability from such results requires making a number of often-untested assumptions. This work compares the predictions of capacitor-based models to results from accelerated lifetest of logic CPU products. For the technology studied, lifetest failure rate was...
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