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Bipolar (electrons and holes) charge injection, the onset voltages of electroluminescence as low as 1.4 V, and power efficiency of around 0.2% are demonstrated in thin nanocrystalline-Si/SiO2 multilayer LEDs grown by plasma-enhanced CVD.
Negative photo-conductivity, super linear variation of short circuit current with incident light power, and IR absorption have been observed in Si-rich oxynitride film containing silicon nanocrystals and the mechanism was discussed.
Photovoltaic and photoconductive properties of ultra-thin a-Si/SiO2 multilayers grown by PECVD and annealed at 1150degC were studied. A quantum yield greater than one is observed due to secondary carrier generation from interface trap states.
The effect of an injection barrier placed on top of a nanocrystalline-Si/SiO2 multilayered LED is discussed. Direct and alternating current injection schemes and time resolved electroluminescence are reported.
The communications and computing industries are challenged to fasten and enlarge information exchange. The electrical chip routing challenges in the computer industry have driven the interest for silicon photonics. The idea is to integrate photonic circuits into a standard microelectronics process. In this paper we will review the status of the field and report on our progresses. In Trento we are...
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