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Electrical and radiation test results will be presented on a deep submicron radiation hardened 16 Mb SRAM IC. The significant technology development and device design challenges will be chronicled from initial SEE modeling, to testchip hardware, to final electrical characterization and radiation test validation. Model to hardware correlation results and model validation will be described. These results...
There is an ever-present focus on increasing the functional density of components used in space electronics, that is, putting more functional capacity in smaller, lighter packages. Packages with small footprints use less board area, potentially reducing system mass. High-density devices may reduce the total required chip count, further eliminating mass and improving system reliability. Low power devices...
The IBM 256 K SRAM is a high-performance, low-power device designed and fabricated in 0.8- mu m Enhanced Radiation-Hardened CMOS technology (RHCMOS-E). It is organized in a 32 K*8 or 256 K*1 configuration and is available with either CMOS or TTL input receivers. The device was developed to satisfy future space application requirements. Radiation testing indicates that the device meets or exceeds all...
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