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InP-InxGa(1-x)As-InP quantum well tube (QWT) structures are grown on InP nanowires that are [100] oriented. The In mole fraction, x is varied between 0 and 1. The QWTs grown on the facets of the [100] nanowires that have {100} and {011} side facets forming an octagonal cross-section, are found to be highly non-uniform. Bright emission is observed at room temperature from these QWTs. Band-gap tunability...
Growth of Au-catalyzed InP nanowires (NWs) by metalorganic chemical vapor deposition (MOCVD) has been studied in the temperature range of 400-510°C and V/III ratio of 44-700. We demonstrate that minimal tapering of InP NWs can be achieved at 400°C and V/III ratio of 350. Zinc-blende (ZB) or wurtzite (WZ) NWs is obtained depending on the growth conditions. 4K microphotoluminescence (μ-PL) studies show...
A novel hexangular tube structure of ZnO has been successfully synthesized via the solvo-thermal method, using Zn(NO3)2o6H2O and NaOH as starting materials. The results showed that the supersaturation near the surface of ZnO crystal is higher than that inside the crystal, which leads to a preferential growth along c-axis of the side surface. The strain between the surface and the bulk of ZnO rods...
Germanium nanocrystals (nc-Ge) embedded in SiO 2 glassy matrix have been prepared on glass substrates and silicon (100) wafers by an rf cosputtering technique and post-annealing treatment in vacuum atmosphere. Using Raman spectrometry, X-ray diffraction, and UV/VIS/NIR transmittance and reflectance measurements, we have investigated the structures and the optical properties of the Ge-SiO ...
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