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The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultrascaled FinFET geometries where the presence of a few traps can strongly influence the device behavior. Typical methods for interface trap density (D_it) measurements are not performed on ultimate devices but on custom-designed structures. We present the first set of...
This paper describes the first single impurity metrology study and the first experimental study of the behavior of the active cross-section area in function of gate voltages (VG) for undoped FinFETs. From one side we show how we can identify chemical species, electric field and position for a donor present in the channel of a doped FinFET. From another side, for the undoped devices, we propose a mechanism...
Modern MOSFET devices with undoped channel have a non-trivial current distribution, which is gate voltage dependent. In our work we have studied the sub-threshold behavior of undoped triple gate MOSFETs (FinFETs) using a thermionic transport model. We have analyzed the conductance data of such devices, and from this, we have been able to determine the evolution of both the active cross-section area...
Temperature (T) dependent transport measurements of cylindrical shaped gate-all-around silicon nanowire MOSFETs (SNWFETs) were performed. Single electron tunneling behaviors were observed at 4.2 K and one of the devices exhibited anomalously strong current peak which survived even at room temperature. The observed peak was interpreted as an evidence of transport through single impurities in the channel.
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