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We investigate how X-ray exposure impact the long term reliability of 130-nm NMOSFETs as a function of device geometry and irradiation bias conditions. This work focuses on electrical stresses on n-channel MOSFETs performed after irradiation with X-ray up to 136 Mrad(SiO2) in different bias conditions. Irradiation is shown to negatively affect the degradation during subsequent hot carrier injection...
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