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W-Band High Electron Mobility Transistors (HEMTs) with 100nm gate length were fabricated on the AlGaN/GaN heterostuctures with 22 nm and 18 nm AlGaN barrier layer, respectively. Due to the suppressed short-channel effect, the DC and RF characteristics of AlGaN/GaN HEMT with 18 nm barrier layer are much better than the ones with 22 nm barrier layer. The conclusion can be drown that once the ratio of...
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