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In this paper, we report on a novel E-mode AlGaN/GaN gates-seperating groove heterostructure field-effect transistor (GSG HFET). The current turn-on/off is controlled by changing gate voltage to regulate the horizontal energy band between the double gates. A threshold voltage of 0.23 V and a high drain current density of 851 mA/mm are obtained in GSG HFET. Compared with the proposed depletion-mode...
Pulse transient simulation is very useful for analyzing the mechanism of dynamic current collapse in GaN-based HEMTs. In this paper, the dependency of current collapse on the device structure is analyzed based on the two-dimensional numerical simulation. The turn-on pulse gate-lag transient currents of Al0.3Ga0.7N/GaN HEMTs with different gate lengths and drain-source distances were obtained, and...
Two passivation techniques were applied on AlGaN/GaN high electron-mobility transistors (HEMTs) with thin barrier thickness (12 nm). 5 nm AlN interfacial passivation layer was deposited by plasma enhanced atomic layer deposition (PEALD) before 50 nm SiN protection layer grown by plasma enhanced chemical vapor deposition (PECVD). Compared with traditional SiN passivation, the insertion of AlN could...
This paper proposes an improved small signal model (SSM) for 90 nm gate-length AlGaN/GaN HEMTs. A mesa edge effect capacitance (CMEE) is introduced into the small signal model to characterize the mesa edge effect. Using scaling formula, the value of CMEE is obtained as 5.1fF. This capacitance makes fT degeneration, especially in small gate-width (Wg) AlGaN/GaN HEMTs. After de-embedding CMEE from AlGaN/GaN...
W-Band High Electron Mobility Transistors (HEMTs) with 100nm gate length were fabricated on the AlGaN/GaN heterostuctures with 22 nm and 18 nm AlGaN barrier layer, respectively. Due to the suppressed short-channel effect, the DC and RF characteristics of AlGaN/GaN HEMT with 18 nm barrier layer are much better than the ones with 22 nm barrier layer. The conclusion can be drown that once the ratio of...
Based on the analysis of short-channel effects and device modeling of Nano-gate AlGaN/GaN high-electron mobility transistors (HEMTs), the key device characteristics of gate-length from 500 down to 50nm have been studied by numerical simulations. And the relationship between aspect ratio (the ratio of gate-length and the thickness of barrier layer) and the degeneration of these parameters is discussed...
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