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The fabrication of Power Switching Devices (IGBT, MOSFET, BCD) requires Ion Implants in the Medium Energy Range (70-200keV) and at high doses (>1E15 Ion/cm2) . These Medium Energy High Dose (MEHD) implants have traditionally been supported by stationary spot beam spinning disk batch tools on 200mm (and smaller) substrates. Power Device Manufacturers are increasingly migrating to Single Wafer tools...
High energy hydrogen and helium ion implants are required for enhancing performance of advanced power devices, such as improving breakdown voltage and switching response for IGBT products. The Varian Semiconductor Equipment business unit of Applied Materials has employed the VIISta platform architecture to provide production level throughputs of high energy hydrogen and helium for both standard and...
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