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Low-frequency noise (LFN) in double-gate (DG) In–Ga–Zn–O (IGZO) thin-film transistors (TFTs) is studied to investigate the origin of performance improvement. We found that thinning down the IGZO film enhances such improvements. With 7-nm IGZO, the mobility is raised by a factor of 3.77, and the subthreshold slope is reduced to 0.17 V/decade from single-gate to DG mode. Device simulations show that...
Self-aligned printing (SAP) is a recently developed bottom-up printing technique which utilizes the unique ink droplet motion on heterogeneous surfaces to define nanoscale critical features with high yield and uniformity. It was originally developed with conductive polymers. Here we extend this method to fabrication of functional conductive nanostructures with gold nanoparticle ink that allow achieving...
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