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A correlation between “haze” signals from DF (dark field) inspectors and electrical failure rates is reported. We provide experimental data that reflect a direct correlation between haze-signal values and the rate of electrically failing bits in advanced SRAM. This result is considered in the light of experiments including haze signals produced by wafers on which polystyrene latex (PSL) particles...
Cu-via open failures have become a major yield-loss factor for advanced SoCs. In this paper, we propose a new “scribe VC-TEG” for the short-loop monitoring of Cu-via open failures. The VC-TEG is to be embedded in the scribe lines of SoC product wafers. We introduce this TEG and discuss the optimization of its design. Critical area analysis (CAA) is utilized in quantitatively evaluating the TEG pattern...
We propose a new and fast method for testing contact-hole-roughness (CHR), which is a major yield-loss factor for advanced SRAMs. This proposed method is using defect-review SEM image processing. The method can monitor CHR 100 times faster than the conventional method by CD-SEM. The speed can facilitate faster identification of process countermeasures by, for example, making detailed monitoring of...
We studied the VC (voltage contrast) enhancement technique of the FA (failure analysis) tool. We found a gate leak VC dependency on the relative angle between the beam scan direction and gate electrode direction. A simplified RC model can explain this phenomenon qualitatively. With the help of this VC enhancement technique of the FA tool, we could tune the EBI recipe in appropriate sensitivity. As...
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