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Fabricated in 56nm CMOS technology, an 8Gb multi-level NAND Flash memory occupies 98.8mm2, with a memory cell size of 0.0075mum/b. The 10MB/s programming and 93ms block copy are also realized by introducing 8kB page, noise-cancellation circuits, external page copy and the dual VDD scheme enabling efficient use of 1MB blocks
A 146 mm/sup 2/ 8 Gb NANO flash memory with 4-level programmed cells is fabricated in a 70 nm CMOS technology. A single-sided pad architecture and extended block-addressing scheme without redundancy is adopted for die size reduction. The programming throughput is 6 MB/s and is comparable to binary flash memories.
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