The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
First ever demonstration of LDMOS transistors on Sion-SiC hybrid substrates. No degradation in transistor performance as compared to conventional SOI. PolySiC is available in larger wafer sizes but seems to have slightly lower heat conductivity than crystalline SiC. The intermediate alpha-Si layer provides electrical advantages and does not form any thermal barriers.
Thermal characterization of the new Si-on-SiC hybrid substrate has shown thermal properties superior in comparison with SOI. The thermal resistivity was shown to be a factor of four lower, and the lateral thermal spread was much more efficient, as is explained by the excellent heat conductivity of the SiC substrate. These results correspond well to the absence of MOSFET self-heating effects for the...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.