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Tri-level resistive switching behavior was observed in an Al2 O3/SiO2 gate stack with Ru metal nanocrystals embedded in the Al2O3 layer. The device was successfully switched among three resistance states (high, medium, and low) after a forming process using a simple electrical method. The resistance ratio of the high-resistance state to the low-resistance state is more than 103. The insulator-to-conductor...
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