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In our earlier work, we presented a percolation theory-based analytical model to estimate FinFET’s ${V}_{T}$ distribution due to fin edge roughness. The earlier models in the literature were based on minimum fin width, the limitations of which were discussed in detail. In this paper, we advance the percolation theory-based model to capture the variability in all key-device parameters, viz. ${I}_{ \mathrm{\scriptscriptstyle ON}}$ ...
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