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We studied the response of a commercial 0.13-mum CMOS technology to high-energy (24-GeV) proton irradiation, which emulated the environment the front-end electronics of future high-energy accelerators will have to operate in, for fluences up to 1016 p/cm2 . After irradiation, large negative shifts in the threshold voltage and large drops in the maximum transconductance were observed in PMOSFETs, whereas...
We studied the response of a commercial 0.13-μm CMOS technology to high-energy (24-GeV) proton irradiation, which emulated the environment the front-end electronics of future high energy accelerators will have to operate in, for fluences up to 1016 p/cm2. After irradiation, large negative shifts in the threshold voltage and large drops in the maximum transconductance were observed in PMOSFETs, whereas...
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