The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Effective monolithic integration strategies for high quality quantum III–V nanostructure fabrication on Si will be introduced. The methodologies presented range from ultrathin planar Ge virtual substrates for the integration of single photon emitters with high temperature stability to advanced three-dimensional Ge growths strategies.
The report is dedicated to development of scintillators based on the single crystalline films of Lu2SiO5 (LSO), (LuxGd1−x)2SiO5 (LGSO) and Y2SiO5 (YSO) orthosilicates grown by Liquid Phase Epitaxy (LPE) methods. We also compare the luminescent and scintillation properties of Ce doped LSO and YSO SCFs with the properties of their single crystal counterparts, growth by Czochralski method.
The report is dedicated to development of the scintillators based on the single crystalline films of Ce doped (Gd,La,Y,Lu)3(AlGaSc)5O12 multi-component garnets onto G3Ga5O12 and Y3Al5O12 substrates compounds grown by Liquid Phase Epitaxy (LPE) method.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.