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Amorphous InGaZnO junctionless thin-film transistors (a-IGZO JL-TFTs) with different active layer thicknesses and thermal treatments were fabricated. The unique feature of a-IGZO JL-TFTs is that all of the active layer and source/drain (S/D) electrodes are realized by the deposition of the InGaZnO thin film. A quantitative analysis to completely deplete the active layer when the device is turned OFF...
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