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The core-multishell nanowires of n-InP/ i-GaInAs/ p-InP were successfully grown on an InP(111)B substrate by low-pressure metal organic vapor phase epitaxy (MOVPE) using an indium self-catalyst. The self-catalytic vapor-liquid-solid (VLS) mode was used to obtain high-quality nanowires in which a deposited indium droplet acts as the catalyst instead of a metal particle, as in the case of the conventional...
Photoluminescence emission of InP/GalnAs/InP coremultishell nanowires was obtained at room temperature. InP nanowires were grown on InP(111)B substrate by selfcatalytic VLS mode of MOVPE using an indium catalyst. InP-core and GaInAs-shell structure was grown by changing the growth temperature. We have successfully obtained the PL emission from these core-shell nanowires at room temperature, and measured...
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