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As Flash memories are approaching their ultimate scaling limit, reversible resistance switching attracts considerable interest because of its potential for high density non volatile memory devices. Resistive switching phenomena have been reported in many transition metal oxide films such as TiO2 or MO. This work investigates the feasibility of emerging resistive- switching devices with NiO active...
The NiO resistive-switching memory is under investigation due to its attractive properties and scaling potential. In this paper, we evidence the possible coexistence of both the bipolar and unipolar switching modes in NiO films. The bipolar mode can be activated provided the oxidation time is limited so that O2- movement through easy paths allows electrochemical reduction/oxidation, while the unipolar...
Resistance switching is an interesting alternative to conventional charge storage devices for future high density storage media. Cu/CuTCNQ(300 nm)/Al memory structures with pad size ranging from 1000 down to 150 ??m were carefully studied to apprehend their switching behavior. Electrical testing revealed bipolar resistive switching and a shrink of the memory window as the pad-size decreased. Current...
Conventional memories approaching their scaling limit, reversible resistance switching effects attract considerable attention because of the potential for high density non volatile memory devices. These resistive switching phenomena have been reported in many simple transition metal oxide films such as TiO2 or NiO deposited by standard sputtering techniques. This paper is investigating the feasibility...
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