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This paper describes an original silicon nLDEMOS transistor layout which allows improving the microwave power performances. Results of DC, small and large signal measurements are presented and compared between the standard and the original layouts. Regarding the power performances (power density, power added efficiency, power gain), this confrontation shows clearly the interest in using the original...
This paper presents the RF power performances of nLDMOSFETs fabricated on bulk and SOI substrates and the layout changes made to improve these performances. It is shown that simple design rules modifications can be done to increase fmax, by reducing the gate resistance, without penalizing fT. A significant improvement of both the output power Pout and the power added efficiency PAE is demonstrated...
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