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Time-dependent dielectric breakdown (TDDB) measurements have been made on 96, 121 and 147 Å oxides deposited by remote plasma enhanced chemical vapor deposition (RPECVD) upon 300°C Si( 100) device grade substrates. The oxides were used to form an array of 10 μm × 10 μm square capacitors. The oxides were then subjected to electron injection from the substrate at 0.1 A cm −2 constant stress...
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