Time-dependent dielectric breakdown (TDDB) measurements have been made on 96, 121 and 147 Å oxides deposited by remote plasma enhanced chemical vapor deposition (RPECVD) upon 300°C Si( 100) device grade substrates. The oxides were used to form an array of 10 μm × 10 μm square capacitors. The oxides were then subjected to electron injection from the substrate at 0.1 A cm −2 constant stress current. Analysis of the forcing voltage during stress showed the RPECVD oxide to have an initial electron trap density of 1.7±0.2 × 10 18 cm −3 . The stress voltage rose linearly with time, giving net electron trap filling rates of 3.1±0.2 × 10 16 cm −3 s −1 . The TDDB data were analyzed to find breakdown occurring on average in localized areas of (69±9 Å) 2 containing 19±4 filled electron traps. A similarly fabricated 92 Å thermal oxide showed an initial electron trap density of 5.6±2 × 10 17 cm −3 and a net electron trap filling rate of 2.0±0.2 × 10 16 cm −3 s −1 . For the 92 Å thermal and 96 Å RPECVD oxides, both ≈ 100 Å thick, an average localized breakdown area of (68±11 Å) 2 , containing 18±3 filled electron traps was calculated. The breakdown area and electron trap numbers did not vary in a statistically significantly manner with deposition technique or oxide thickness. Analysis of the electric field showed that at breakdown for the thermal oxide 1/E = 0.0702±0.0008 cm MV −1 , while the RPECVD oxide had 1/E=0.11±0.01 cm MV −1 .