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This paper reports on gate-last (GL) In0.7Ga0.3As QW MOSFETs with regrown S/D by MOCVD. Long-channel devices exhibit excellent electrostatics and carrier transport (SS=80mV/dec., DIBL=22mV/V, and μn,eff>5,500 cm2/V-s at 300k). Short-channel device with Lg = 40 nm also exhibit excellent electrostatic integrity of SS = 105 mV/dec., and DIBL = 150 mV/V, together with gm_max = 2 mS/µm at VDS = 0.5...
In this paper we demonstrate for the first time the origin of the deep reset and low switching variability obtained on pulse-programmed (100ns) 90nm-size W\Al2O3\TiW\CuCBRAM device operated at 10 μA. To this aim we develop a Quantum-Point-Contact (QPC) model describing the conduction of the CBRAM states down to deep current levels, allowing to estimate the effective size of the defect particles in...
In this paper we demonstrate excellent memory performances of a 90nm CMOS-friendly W\Al2O3\TiW\Cu CBRAM cell integrated in a 1T1R configuration and withstanding the back-end of line thermal budget of 400°C. The cell exhibits low-power and highly controlled set and reset operations, allowing reversible multilevel programming controlled by both the set current and the reset voltage. Low-voltage (<3V)...
This paper reports Extremely-Thin-Body (ETB) InAs quantum-well (QW) MOSFETs with improved electrostatics down to Lg = 50 nm (S =103 mV/dec, DIBL = 73 mV/V). These excellent metrics are achieved by using extremely thin body (1/3/1 nm InGaAs/InAs/InGaAs) quantum well structure with optimized layer design and a high mobility InAs channel. The ETB channel does not significantly degrade transport properties...
This paper reports InAs quantum-well (QW) MOSFETs with record transconductance (gm,max = 1.73 mS/µm) and high-frequency performance (fT = 245 GHz and fmax = 355 GHz) at Lg = 100 nm. This record performance is achieved by using a low Dit composite Al2O3/InP gate stack, optimized layer design and a high mobility InAs channel. This work is significant because it shows a possible III-V material pathway...
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