The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
For the first time strain additivity on III-V using prototypical (100) GaAs n- and p-MOSFETs is studied via wafer bending experiments and piezoresistance coefficients are extracted and compared with those for Si and Ge MOSFETs. Further understanding of these results is obtained by using multi-valley conduction band model for n-MOS and performing k.p simulations for p-MOS. For GaAs n-MOSFET, uniaxial...
A QPSK modulator (MOD) and demodulator (DEMOD) in InGaP/GaAs HBT process and its measured performance are reported. When connected in a wireless configuration using two ultra wideband antenna, it was demonstrated to have throughput of greater than 1 Gb/s at 30 GHz. This is the first time these results have been reported.
This paper reports a QPSK modulator (MOD) and demodulator (DEMOD) in InGaP/GaAs HBT process and its measured performance. When connected back-to-back in a packaged form it was demonstrated to have throughput of greater than 2 Gb/s at 30 GHz. This is the first time these results have been reported.
Flexible thin film transistors (TFTs) with high performance can be fabricated by using printable arrays of microstructured Si ribbons or GaAs wires (mus-Si or mus-GaAs) generated from high-quality, single-crystal, bulk wafers. The resulting Si-based MOSFETs and GaAs-based MESFETs on thin plastic substrates exhibit excellent electrical and mechanical (i.e. bending) properties. The combined use of these...
A new GaAs switching device with an n/sup +/-p- delta (n/sup +/)-i- delta (p/sup +/)-i-n/sup +/ structure has been demonstrated. An interesting S-shaped negative differential resistance (NDR) is shown to occur that originates from the avalanche multiplications within the delta (n/sup +/)-i- delta (p/sup +/)-i sawtooth doped superlattice (SDS). The excellent NDR behaviour gives the studied structure...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.