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A new methodology is presented that directly extracts the location and amount of trapped charge in GaN HEMTs by making use of a special test structure with an additional sense node in-between the gate and drain. The technique is validated on three wafer types: one for which trapping predominantly occurs in the GaN epitaxy, one with both epitaxy trapping and surface charge injection, and one for our...
The capacitance-voltage(C-V) and switching characteristics of AlGaN/GaN HEMT has been calculated analytically. The device capacitances and switching parameters, which have been calculated, depends on the basic device parameters and terminal voltages which determine the microwave behavior of a device. The nonvariant nature of this device with drain voltage leads to better device choice for high power...
An analytical thermal model of AlGaN/GaN high electron mobility transistor (HEMTs) has been developed. This temperature dependent model incorporates the polarization effects at heterointerface. The model also accounts for the mobility degradation with increase in temperature, which is one of the major causes in deteriorating the driving current. By using the variation of band gap with temperature,...
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