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We studied the electrical characteristics and electrical stress instabilities of amorphous In–Ga–Zn–O (-IGZO) dual-gate thin-film-transistors (DG TFTs). A threshold voltage of the bottom-gate (BG)-driven -IGZO DG TFTs showed a linear dependence on the top-gate (TG) voltage. The slope of this dependence is associated with the ratio of the TG to BG insulator capacitance. The BG-driven DG TFT showed...
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