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InGaAs/AlInAs/InP is a successful semiconductor material for operation of high performance mid-infrared quantum cascade lasers (QCLs) [1, 2]. However, in the THz region, a thin AlInAs barrier is required due to its high conduction band offset energy (530 meV) and is believed to limit a laser performance since subband position would be very sensitive to the layer thickness. In this work, we use a different...
We developed two mid-infrared quantum cascade laser structures based on InAs quantum dashes embedded either in AlInGaAs lattice-matched to InP or in tensile-strained AlInAs. Both devices emit between 7 and 11 µm.
A two-step growth approach was used to monolithically integrate p-i-n InGaAs photodiodes with a InAlAs/InGaAs lattice matched on InP HEMT circuit. The HEMT structure is first grown by MBE and exhibits a Hall mobility in excess of 11000 cm2/Vs with a ns of 2.6.1012 cm??2 at room temperature. After the patterning of these epilayers, the p-i-n diode structure is selectively regrown by CBE using SiO2...
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