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The fabrication of Power Switching Devices (IGBT, MOSFET, BCD) requires Ion Implants in the Medium Energy Range (70-200keV) and at high doses (>1E15 Ion/cm2) . These Medium Energy High Dose (MEHD) implants have traditionally been supported by stationary spot beam spinning disk batch tools on 200mm (and smaller) substrates. Power Device Manufacturers are increasingly migrating to Single Wafer tools...
Deliberately non-uniform dose implants are used in the industry to improve device performance across the wafer by compensating for non-uniformities introduced by process steps other than implantation. Varian ion implanters have offered this SuperScan™ capability for close to ten years [1–3]. Recent developments in SuperScan on Varian mid-current implanters significantly expand the ability to deliver...
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