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We demonstrate an in-situ surface passivation technique for the formation of high-permittivity gate dielectric on GaAs using a multiple chamber metal-organic chemical vapor deposition (MOCVD) system. In-situ vacuum annealing and SiH4 treatment were performed prior to high-κ dielectric deposition. This novel passivation scheme effectively suppresses the formation of Ga or As oxide during the high-κ...
In this letter, we report a novel n-channel GaAs MOSFET featuring TaN/HfAlO/GaAs gate stack with in situ surface passivation (vacuum anneal and silane treatment), alternative gold-free palladium-germanium (PdGe) source and drain (S/D) ohmic contacts, and silicon plus phosphorus coimplanted S/D regions. With the novel in situ surface passivation, excellent capacitance-voltage characteristics with low-frequency...
To improve trapping using deeper well AlGaN (chi=3.8eV), lower voltage drop in high-K AlLaO3 barrier (k=23 ), and smaller erase current by large DeltaEC of AlLaO3/TaN, the SiO2/AlGaN/AlLaO3/TaN devices show good 85degC memory integrity of low plusmn10V 1ms P/E, large 3.9V initial DeltaVth and 2.4V extrapolated 10-year retention. A fast 100mus P/E of plusmn11V still gives 3.0V initial DeltaVth and...
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