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GAA TSNWFET with 15 nm gate length and 4 nm radius nanowires is demonstrated and shows excellent short channel immunity. p-TSNWFET shows high driving current of 1.94 mA/mum while n-TSNWFET shows on-current of 1.44 mA/mum. Merits of TSNWFET and performance enhancement of p-TSNWFET are explored using 3D and quantum simulation
The reliability issues, including 100k cycle's endurance and 2 hours high temperature storage (HTS: 150degC, 200degC and 250degC) of sub-90nm NAND flash cells, are studied. Furthermore, the trap generation models in endurance and interface trap recovery model in HTS are proposed. Endurance characteristics show that the interface trap and bulk trap generation have a power-dependence on program/erase...
As a part of continued multi-bridge-channel MOSFET (MBCFET) study, we have successfully fabricated 122Mb SRAM cell with 25 nm gate length CMOS MBCFET on bulk Si wafers. The 6-T MBCFET SRAM cell shows high static noise margin (SNM) of 320 mV at Vcc= 0.8 V. Using tall-embedded-gate (TEG) and source/drain (S/D) engineering, 2.6times105 times on/off current ratio and 3.46 mA/mum of on-state current at...
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