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The kinetics which explained the copper Superfilling by electrodeposition was investigated since the copper electrodeposition became the standard technique for TSV. In order to interpret the bottom-up Superfilling process conveniently and exactly, a numerical model focused on the mass which can make the copper deposition in the via is built. This model only considered the effect of accelerator and...
TSV (Through Silicon Via) is an enabling technology for 3D WLP (Wafer Level Packaging) and 3D integration. TSV is a very hot topic for semiconductor industry today. One of the key processes for TSV is the electroplating process. The quality and rate of electroplating are two critical parameters for TSV filling, which can be significantly improved by Bottom-Up filling with much thinner overburden....
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