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This paper elucidated for the first time that titanium (Ti) is an excellent barrier metal (BM) material from the stand point of cost and performance, especially for the porous low-k ILD materials. Both stress induced voiding (SIV) suppression and one order longer electromigration (EM) lifetime were obtained by introducing Ti instead of the conventional tantalum (Ta). It has been considered that the...
A key technology for realizing an effective k-value (keff) required for 45nm node is proposed. We studied the behavior of effective dielectric constant derived from capacitance of double-level copper interconnect wires with porous low-k material in detail. The porous low-k materials easily absorb moisture due to process damage and the dielectric constant drastically increases. We have confirmed that...
An integration method using effective porogen control to improve the reliability of 45-nm (hp65) Cu interconnects with ultra low-k (ULK) stacked $porous-polyarylene (PAr)/porous-SiOC (k = 2.3/2.3) - hybrid dual damascene (DD) structures. By optimizing an electron beam (EB) assisted thermal cure, the target amount of porogen left in via inter layer dielectric (ILD) to enhance the etching damage resistance...
Moisture induced via failure (MIVF) is studied for 45nm interconnect technology using porous low-k films. Test patterns are designed to examine the layout dependence of the MIVF. Some fundamental and important layout dependencies of the via resistance increase are investigated and considered for the first time. It has been found that the MIVF has not been suppressed, even though multiple vias structure...
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