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In this paper we have grown catalyst-free In(Ga)N nanowires and dot-in-nanowire heterostructures on (001) and (111) silicon substrates by plasma-assisted MBE. The nanowires grow in the wurtzite structure with c-axis in the direction of growth. HRTEM data indicate that the nanowires and dot-in-nanowires are defect free. The diameter of the nanowires can be varied from 50-100nm by varying the growth...
Thermal transient measurement of the 808 nm GaAs-Based laser diodes (LDs) before and after the constant current stress are presented and discussed in this paper. Aging tests are carried out under the conditions of the constant current stress (1 A) for 255 hours. The total thermal resistance increases from 7.0 to 8.8°C/W before and after degradation. Furthermore, the contribution of each component...
It's proved that the physical meaning of the electrical average temperature rise of series LED array system tested by electrical temperature sensitive parameter (TSP) method is the arithmetic mean of the temperature rises of all sub-LEDs in the system. Based on this relationship, a novel method to evaluate the temperature distribution of series LED systems by scan measurement and recursive calculation...
In this paper, the linear relationship of forward Schottky junction voltage of AlGaN/GaN HEMT with temperature was investigated. It was used as temperature sensitive parameter to determine the channel temperature at its normal working state by fast switch circuit technique. The regress of tested data was used to reduce the scatter error too. The thermal resistance constitution was extracted from the...
Testing QCL devices usually requires cryogenic systems, mid-IR windows, optics and detectors. We report here the demonstration of an electrical derivative method that can quickly measure QCL lasing thresholds without using mid-IR optics or detectors.
Magnetotransport properties of the two-dimensional electron gas (2DEG) in the triangular quantum well at AlxGa1-xN/GaN heterointerfaces have been investigated by means of temperature dependent Shubnikov-de Haas (SdH) measurements at low temperatures and high magnetic fields under illumination. After the illumination of the heterostructures, the 2DEG concentration increases and the SdH oscillation...
A large quantity of high purity InP crystal material has been produced by the phosphorus in-situ injection synthesis. In the injection method, phosphorus reacts with indium very quickly so that the rapid polycrystalline synthesis is possible. The injection speed, melt temperature, phosphorus excess, and so on are also important for a successful synthesis process. About 3200-4800 g stoichiometric high...
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