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In this work, the effects of electrodes on the performance of sol-gel fabricated ZnO thin film transistor were investigated. The metal with high work function such as Pt was employed as the source-drain electrodes. Compared to the device with Al electrodes as reported before, the transistor fabricated with Pt electrode exhibited lower saturation voltage and current, which was due to the Schottky contact...
The thermal and electrical stabilities of Cu contact on NiSi substrate with and without a Ru/TaN barrier stack were investigated. Four point probe (FPP), X-ray diffraction (XRD), scanning electron microscopy (SEM), and Schottky barrier height (SBH) measurement were carried out to characterize the diffusion barrier properties. The results show that the Ru(14 nm)/TaN(15 nm) stack can be both thermally...
In this paper, a bi-layered Ti/TiN capping is proposed and demonstrated to be very effective to suppress oxygen contamination, and to allow the formation of Yb-silicide using conventional PVD and RTA systems. It is revealed that the diffusion of Ti into TiN layer plays the key role for oxidation suppression. The admittance measurement is proposed to extract Schottky contact barrier height. In this...
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