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Tunnel FETs with vertical tunnel paths are fabricated and successfully modeled by the nonlocal band to band tunneling model. Although enhancement of ON currents are obtained by longer source gate overlap lengths, the increase of the ON current is less than proportional to the overlap lengths, because of non-uniformity of the band to band tunneling generation rates. The behavior of this type of tunnel...
A point-source model of ion implantation for 3D simulation is proposed for the first time. Implanted ion profile is calculated by integrals, over implanted surface, of point-source implanted profiles which are calculated by a well-tuned Monte Carlo simulation and are then reconstructed by analytical functions considering various channeling directions. The significance of the proposed model is demonstrated...
A new implantation model which considers effects of covered layers to channeling effects in substrate is proposed. Physics of energy loss and scattering in covered layers are summarized to a simple expression. The model is easy to implement to any existing process simulators, and accuracy is drastically improved not only for advanced devices but also for legacy devices.
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