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This paper studied the recess-etching effects on the temperature-dependent characteristics of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with Al2O3/AlN gate-stack. The 12.6 nm recess-etching resulted in voltage shift of capacitance-voltage curves by 2.4 V, improved peak field-effect mobility ($\mu _{\text {FE}})$ from 1906 to 2036 cm2/$\text{V}\cdot \text{s}$ ...
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