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This paper reports on an extensive analysis of the breakdown of GaN-based Schottky-gated HEMTs submitted to high-voltage stress. The analysis was carried out on transistors with different lengths of the drain-side gate-head ($L_{\mathrm {GH}}$ ), corresponding to different levels of electric field across the SiN passivation. Based on dc measurements, 2-D simulations, and optical analysis, we demonstrate...
This paper presents an implementation of an electrostatic MEMS switch which can be triggered by a very low input voltage in the range of ∼50mV. This device can thus be used as a zero-DC power signal threshold detector suitable for waking up larger battery powered systems. The device consists of an electrically conductive torsional see-saw paddle with four balanced electrodes. The device is symmetrically...
Novel CMOS device is proposed as a biochemical sensor. We modified the basic architecture of an extended floating-gate field-effect transistor (FET) to be suited for VLSI applications. The FET has a floating-gate that is umbrella-shaped (UGFET), maximizing its charge sensing area in a much reduced transistor area. Compared to previous extended floating-gate structures, the UGFET shows improved scalability...
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