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Recent development in Information and Communication Technology (ICT) has drawn attention of scientists and engineers to develop ICT enabled laboratories. In this context development of an ICT enabled high voltage laboratory with facilities of remote operation is required because of its demand in the Engineering education as well as the assessment of insulation for continuous monitoring of the health...
This paper presents observation of intermediate state in quantum dot gate InGaAs FETs. The crosssectional schematic of a InGaAs FET consisting of a thin II-VI (nearly lattice matched) tunnel insulator was shown. Two layers of GeOx-cladded Ge dots are assembled on a multi-layered ZnSe/ZnMgS/ZnSe gate insualtor region (grown using a photoassisted metalorganic chemical vapor deposition technique) between...
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