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The capacitance-voltage(C-V) and switching characteristics of AlGaN/GaN HEMT has been calculated analytically. The device capacitances and switching parameters, which have been calculated, depends on the basic device parameters and terminal voltages which determine the microwave behavior of a device. The nonvariant nature of this device with drain voltage leads to better device choice for high power...
An analytical thermal model of AlGaN/GaN high electron mobility transistor (HEMTs) has been developed. This temperature dependent model incorporates the polarization effects at heterointerface. The model also accounts for the mobility degradation with increase in temperature, which is one of the major causes in deteriorating the driving current. By using the variation of band gap with temperature,...
We report a compact 2D model for AlGaN/GaN HEMT with different gate stack configurations. A two dimensional analysis is done which also includes the various polarization effects. The output characteristics, device transconductance and cut-off frequency (fT) for 120 nm gate length device are obtained. Peak transconductance of 320 mS/mm and a cut-off frequency (fT) of 120 GHz has been obtained. It is...
This paper presents the characterization of deep-submicron AlGaN/GaN HEMTs for high performance applications, using ATLAS device simulator. The simulations reported in this work involve optimization of the investigated structure. The high RF performance of the device is attributed to the high quality of material and also to optimized device processing. The results are in good agreement with the experimental...
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