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The novel semiconductor material Ga(AsBi) is investigated by the time-resolved photoluminescence as function of lattice temperature, excitation density, and excitation energy. Disorder and localization effects are found to strongly influence the spectra and the dynamics.
We report lasing of optically pumped Ga(NAsP)/(BGa)(AsP) heterostructures grown lattice-matched on Si. Modal gain of up to 80 cm-1 is determined at 300 K and a distinct threshold behaviour and mode spectrum is observed up to 100 K.
The focus of the present study is the optical characterisation of the novel direct band gap material Ga(NAsP) monolithically grown on Si substrate. Ga(NAsP)/(BGa)(AsP) multi-quantum-well heterostructures (MQWHs) were deposited by low temperature metal organic vapour phase epitaxy (MOVPE) in a commercial reactor system on nominally exact (001) Si substrates. In order to realise III/V laser diode the...
Nanocrystalline silicon (nc-Si:H) is an important material for solar cell applications. Thin films of nc-Si:H can be deposited cost-effectively using chemical vapor deposition (CVD) and sputter deposition. While CVD method offer higher deposition rate and is commonly used in PV industry, microstructural properties (such as hydrogen incorporation, crystallinity, surface morphology, dopant incorporation)...
The effect of target materials (single crystalline silicon (c-Si), polycrystalline silicon (p-Si)) and substrate temperatures on structural and electrical properties of a-Si thin films deposited on glass substrate by RF magnetron sputtering have been investigated. The purpose of this work was to find out the cost-effective materials for intrinsic layer in inorganic solar cell device. X-ray diffraction...
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