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Heavily-doped In0.53Ga0.47As tunnel junctions is prepared using molecular beam epitaxy (MBE). Secondary ion mass spectroscopy (SIMS) is used to measure the dopant profiles, these profiles are used to simulate the expected energy band diagrams, and current-voltage characteristics (I-V) are used to characterize the junctions. Devices were fabricated using a self-aligned process to minimize access resistance...
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