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A high-conductivity insulated gate bipolar transistor (IGBT) (HiGT) with a double diffused MOS structure and an n-type hole-barrier layer surrounding a p-layer (planar HiGT) is presented. The hole-barrier layer prevents the holes from flowing into the p-layer and stores them in the n-layer. The planar HiGT provides a better tradeoff between collector-emitter saturation voltage [VcE(sat)] and turn-off...
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