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Microscopic characterization of defects into the depth of the gate oxide is used to compare defects generated during both Hot-Carrier Stress (HCS) and Fowler-Nordheim Stress (FNS). Measured defects are linked to the breakdown (BD) process and there creation rate is modeled.
Most of the oxide breakdown studies are based on the results of measurements in which the oxide is uniformly stressed thus avoiding the HCI (hot carrier injection) regime. As devices typically undergo hot carrier degradation during their operation, ignoring HCI degradation may result in overestimation of the oxide lifetime. In this paper, a deeper understanding of the relation between HCI and oxide...
The Reliability margin of aggressively scaled SiO-based gate dielectrics is strongly reduced. However, the first breakdown (BD) event of ultrathin oxide MOS devices does not always cause the functional failure of digital circuits. This opens the possibility of gaining additional reliability margins from the post-BD stage and has motivated a lot of research in this field. One of the areas of activity...
Nowadays the SiO2 layer thickness (tox) is 1.2 nm or less, and the reliability of such ultra-thin oxide layers has become a major concern for continued scaling. Experimental observation of the empirical power law voltage-dependence was reported on ultra-thin oxides as presented in Wu et al. (2002). We have shown that this unexpected dependence could originate from the multi-vibrational excitation...
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