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High-k/metal gate pMOSFETs were fabricated on high-quality Ge1-xCx for the first time. Ge1-xCx layers with very low RMS roughness of ~3Aring were grown directly on Si by ultra-high-vacuum chemical vapor deposition (UHVCVD), without the use of relaxed Si1-xGex virtual substrates. Ge1-xCx buried-channel (BC) and surface-channel (SC) pMOSFETs with EOT = 1.9 nm and L = 10 mum exhibited high drive currents...
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